TGA2575

Ka-Band 3 Watt Power Amplifier

Data Sheet: Rev C

3/24/16

- 6 of 11 -

Disclaimer: Subject to change without notice

© 2016 TriQuint Semiconductor, Inc.

Application Circuit

Vg must be biased from both sides (pins 2 and 6)

Vd must be biased from both sides (pins 3 and 5)

Bias-up Procedure

Bias-down Procedure

Vg set to -1.5 V

Turn off RF supply

Vd set to +6 V

Reduce Vg to -1.5V. Ensure Id ~ 0 mA

Adjust Vg more positive until quiescent Id is 2.1 A.

This will be ~ Vg = -0.60 V

Turn Vd to 0 V

Apply RF signal to RF Input

Turn Vg to 0 V

1/ Additional bypass capacitors may be required at this location. The presence and value of these capacitors varies by

application. Variables include power supply impedance, power supply stability with reactive loads, and the inductance from the

power supply to this assembly. 1 to 47 uF tantalum capacitors are commonly used here.

RF In

1

6

TGA2575

2

5

RF Out

4

3

C2

1000 pF

C1

1000 pF

Vg 1/

C4

1000 pF

C6

0.01 uF

C3

1000 pF

C5

0.01 uF

Vd 1/