TGA2575

Ka-Band 3 Watt Power Amplifier

Data Sheet: Rev C

3/24/16

- 1 of 11 -

Disclaimer: Subject to change without notice

© 2016 TriQuint Semiconductor, Inc.

Applications

•

Military Radar

•

Communications

Product Features

Functional Block Diagram

•

Frequency Range: 32.0 – 38.0 GHz

•

Power: 35.5 dBm Psat

•

PAE: 22%

•

Gain: 19 dB

•

Return Loss: 12 dB

•

Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical

•

Dimensions: 5.4 x 4.1 x 0.05 mm

General Description

Bond Pad Configuration

TriQuint’s TGA2575 is a wideband power amplifier

fabricated on TriQuint’s production-released 0.15um

pwr-pHEMT process. Operating from 32 GHz to 38

GHz, it achieves 35.5 dBm saturated output power, 22%

PAE and 19 dB small signal gain over most of the band.

Fully matched to 50 ohms, ROHS compliant and with

integrated DC blocking caps on both I/O ports, the

TGA2575 is ideally suited to support both commercial

and defense related opportunities.

The TGA2575 is 100% DC and RF tested on-wafer to

ensure compliance to performance specifications.

Bond Pad #

Symbol

1

RF In

2, 6

Vg

3, 5

Vd

4

RF Out

Ordering Information

Part No.

ECCN

Description

TGA2575

3A001.b.2.e

Ka-band Power Amplifier

Vg

Vg

RF In

1

6

TGA2575

2

5

RF Out

4

Vd

Vd

3