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LTC4449 Datasheet(PDF) 4 Page - Analog Devices

Part # LTC4449
Description  150V Dual High-Side MOSFET Gate Driver
PDF  14 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC4449 Datasheet(HTML) 4 Page - Analog Devices

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LTC7067
4
Rev. 0
For more information www.analog.com
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the specified operating
temperature range, otherwise specifications are at TA = 25°C (Note 2). VCC = VG1VCC = VG2VCC =10V, VG1RTN = VG2RTN = 0V, unless
otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Gate Driver Output (G2)
VOH(G2)
G2 High Output Voltage
IG2 = −100mA, VOH(G2) = VG2Vcc – VG2
150
mV
VOL(G2)
G2 Low Output Voltage
IG2 = 100mA, VOL(G2) = VG2 – VG2RTN
80
mV
RG2_UP
G2 Pull-Up Resistance
VG2VCC–G2RTN =10V
1.5
Ω
RG2_DOWN
G2 Pull-Down Resistance
VG2VCC–G2RTN =10V
0.8
Ω
Switching Time
tPDLH(G1)
G1IN High to G1 High Propagation Delay
20
ns
tPDHL(G1)
G1IN Low to G1 Low Propagation Delay
20
ns
tPDLH(G2)
G2IN High to G2 High Propagation Delay
21
ns
tPDHL(G2)
G2IN Low to G2 Low Propagation Delay
21
ns
tr(G2)
G2 Output Rise Time
10% – 90%, CLOAD = 3nF
18
ns
tf(G2)
G2 Output Fall Time
10% – 90%, CLOAD = 3nF
14
ns
tr(G1)
G1 Output Rise Time
10% – 90%, CLOAD = 3nF
18
ns
tf(G1)
G1 Output Fall Time
10% – 90%, CLOAD = 3nF
14
ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC7067R is specified over –40°C to 150°C operating
junction temperature range. High junction temperature degrades operation
lifetimes; operating lifetime is derated for junction temperatures greater
than 125°C. Note that the maximum ambient temperature consistent with
these specifications is determined by specific operating conditions in
conjunction with board layout, the rated package thermal impedance and
other environment factors.
Note 3: TJ is calculated from the ambient temperature TA and power
dissipation PD according to the following formula.
TJ = TA + (PD • 40 °C/W)
Note 4: The total current includes both the current from G1VCC/G2VCC to
G1RTN/G2RTN and the current to SGND. Dynamic supply current is higher
due to the gate charge being delivered at the switching frequency.
Note 5: Rise and fall times are measured using 10% and 90% levels.



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