TMUX7236 datasheet(20/35 Pages) TI

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7.9 Charge Injection

The TMUX7236 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS

transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal.

The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted

by the symbol QINJ. Figure 7-9 shows the setup used to measure charge injection from source (Sx) to drain (D).

VDD

VSS

VDD

VSS

0.1 µF

GND

VEN

VOUT

Output

0 V

3 V

VEN

QINJ = CL ×

VOUT

tr < 20 ns

tf < 20 ns

S1A

D1 Output

S1B

S2A

D2 Output

S2B

N.C.

Figure 7-9. Charge-Injection Measurement Setup

7.10 Off Isolation

Off isolation is defined as the ratio of the signal at the drain pin (D) of the device when a signal is applied to

the source pin (Sx) of an off-channel. Figure 7-10 shows the setup used to measure, and the equation used to

calculate off isolation.

GND

VSIG

VOUT

Network Analyzer

VDD

VSS

VDD

VSS

0.1 µF

SxA / SxB / Dx

Figure 7-10. Off Isolation Measurement Setup

TMUX7236

SCDS417 – MARCH 2022

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