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BLF644P Datasheet(PDF) 3 Page - Ampleon Netherlands B.V.

Part # BLF644P
Description  Broadband power LDMOS transistor
PDF  12 Pages
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Manufacturer  AMPLEON [Ampleon Netherlands B.V.]
Direct Link  https://www.ampleon.com
Logo AMPLEON - Ampleon Netherlands B.V.

BLF644P Datasheet(HTML) 3 Page - Ampleon Netherlands B.V.

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BLF644P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 12
BLF644P
Broadband power LDMOS transistor
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operation
The BLF644P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =32V;
f = 860 MHz at rated load power.
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID =0.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 32 V; ID = 50 mA
1.4 1.9
2.4
V
VGSq
gate-source quiescent voltage
VDS = 32 V; IDq = 250 mA
1.5 2.0
2.5
V
IDSS
drain leakage current
VGS = 0 V; VDS =32 V
-
-
1.4
A
IDSX
drain cut-off current
VGS =VGS(th) + 3.75 V;
VDS =10V
-9.0
-
A
IGSS
gate leakage current
VGS = 10 V; VDS =0V
-
-
140 nA
gfs
forward transconductance
VDS = 10 V; ID = 2.5 A
-
3.3
-
S
RDS(on)
drain-source on-state resistance VGS =VGS(th) + 3.75 V;
ID =1.75 A
-300
-
m
Table 7.
AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
Ciss
input capacitance
VGS = 0 V; VDS =32 V; f = 1MHz
-
39
-
pF
Coss
output capacitance
VGS = 0 V; VDS =32 V; f = 1MHz
-
15
-
pF
Crs
feedback capacitance
VGS = 0 V; VDS = 32 V; f = 1 MHz
-
0.84 -
pF
Table 8.
RF characteristics
Test signal: CW pulsed, class-AB; f = 860 MHz; RF performance at VDS =32 V; IDq =200 mA;
Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 100 W
22.8
23.5
-
dB
D
drain efficiency
PL = 100 W
62
66
-
%
RLin
input return loss
PL = 100 W
-
15
7dBc



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