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BLF644P Datasheet(PDF) 3 Page - Ampleon Netherlands B.V. |
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BLF644P Datasheet(HTML) 3 Page - Ampleon Netherlands B.V. |
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3 / 12 page ![]() BLF644P#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 3 of 12 BLF644P Broadband power LDMOS transistor 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation The BLF644P is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS =32V; f = 860 MHz at rated load power. Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID =0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 32 V; ID = 50 mA 1.4 1.9 2.4 V VGSq gate-source quiescent voltage VDS = 32 V; IDq = 250 mA 1.5 2.0 2.5 V IDSS drain leakage current VGS = 0 V; VDS =32 V - - 1.4 A IDSX drain cut-off current VGS =VGS(th) + 3.75 V; VDS =10V -9.0 - A IGSS gate leakage current VGS = 10 V; VDS =0V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 2.5 A - 3.3 - S RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75 V; ID =1.75 A -300 - m Table 7. AC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance VGS = 0 V; VDS =32 V; f = 1MHz - 39 - pF Coss output capacitance VGS = 0 V; VDS =32 V; f = 1MHz - 15 - pF Crs feedback capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 0.84 - pF Table 8. RF characteristics Test signal: CW pulsed, class-AB; f = 860 MHz; RF performance at VDS =32 V; IDq =200 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 100 W 22.8 23.5 - dB D drain efficiency PL = 100 W 62 66 - % RLin input return loss PL = 100 W - 15 7dBc |
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