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BLF644P Datasheet(PDF) 6 Page - Ampleon Netherlands B.V. |
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BLF644P Datasheet(HTML) 6 Page - Ampleon Netherlands B.V. |
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6 / 12 page ![]() BLF644P#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 6 of 12 BLF644P Broadband power LDMOS transistor 7.3 Graphical data 7.3.1 1-Tone CW VDS = 32 V; f = 860 MHz. (1) IDq =2 100 mA (2) IDq =2 200 mA (3) IDq =2 300 mA VDS = 32 V; f = 860 MHz. (1) IDq =2 100 mA (2) IDq =2 200 mA (3) IDq =2 300 mA Fig 3. Power gain as a function of output power; typical values Fig 4. Drain efficiency as a function of output power; typical values aaa-009154 0 20 40 60 80 100 120 22.5 23 23.5 24 24.5 25 PL (W) Gp Gp (dB) (dB) (dB) (1) (1) (1) (2) (2) (2) (3) (3) (3) aaa-009155 0 20 40 60 80 100 120 10 20 30 40 50 60 70 PL (W) ηD ηD (%) (%) (%) (1) (1) (1) (2) (2) (2) (3) (3) (3) |
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