BLF644P datasheet(7/12 Pages) AMPLEON

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BLF644P#3

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Product data sheet

Rev. 3 — 1 September 2015

7 of 12

BLF644P

Broadband power LDMOS transistor

7.3.2 1-Tone pulsed

7.3.3 2-Tone CW

VDS = 32 V; f = 860 MHz;  = 20 %; tp =100 s.

(1) IDq =2  100 mA

(2) IDq =2  200 mA

(3) IDq =2  300 mA

VDS = 32 V; f = 860 MHz;  = 20 %; tp = 100 s.

(1) IDq =2  100 mA

(2) IDq =2  200 mA

(3) IDq =2  300 mA

Fig 5.

Power gain as a function of output power;

typical values

Fig 6.

Drain efficiency as a function of output power;

typical values

aaa-009156

100

125

150

PL (W)

(dB)

(1)

(2)

(3)

aaa-009157

100

125

150

PL (W)

ηD

(%)

(1)

(2)

(3)

VDS = 32 V; IDq =2  350 mA; f1 = 889.95 MHz;

f2 = 890.05 MHz.

VDS = 32 V; IDq =2  350 mA; f1 = 889.95 MHz;

f2 = 890.05 MHz.

Fig 7.

Power gain and drain efficiency as function of

output power; typical values

Fig 8.

Third order modulation distortion as a function

of output power; typical values

aaa-009158

23.2

23.4

23.6

23.8

24.2

24.4

PL (W)

(dB)

ηD

(%)

ηD

aaa-009159

-50

-40

-30

-20

-10

PL (W)

IMD3

(dBc)

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