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SIA519 Datasheet(PDF) 3 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # SIA519
Description  N- and P-Channel 20-V (D-S) MOSFET
PDF  12 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

SIA519 Datasheet(HTML) 3 Page - Shenzhen Tuofeng Semiconductor Technology Co

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Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
 300 µs, duty cycle  2 %.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamica
Turn-On Delay Time
td(on)
N-Channel
VDD = 10 V, RL = 2.3 
ID  4.4 A, VGEN = 4.5 V, Rg = 1 
P-Channel
VDD = - 10 V, RL = 3.3 
ID  - 3 A, VGEN = - 4.5 V, Rg = 1 
N-Ch
10
15
ns
P-Ch
20
30
Rise Time
tr
N-Ch
12
20
P-Ch
20
30
Turn-Off Delay Time
td(off)
N-Ch
21
35
P-Ch
25
40
Fall Time
tf
N-Ch
16
25
P-Ch
10
15
Turn-On Delay Time
td(on)
N-Channel
VDD = 10 V, RL = 2.3 
ID  4.4 A, VGEN = 10 V, Rg = 1 
P-Channel
VDD = - 10 V, RL = 3.3 
ID  - 3 A, VGEN = - 10 V, Rg = 1 
N-Ch
5
10
P-Ch
5
10
Rise Time
tr
N-Ch
10
15
P-Ch
10
15
Turn-Off Delay Time
td(off)
N-Ch
15
25
P-Ch
20
30
Fall Time
tf
N-Ch
10
15
P-Ch
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
N-Ch
4.5
A
P-Ch
- 4.5
Pulse Diode Forward Currenta
ISM
N-Ch
15
P-Ch
- 15
Body Diode Voltage
VSD
IS = 4.4 A, VGS = 0 V
N-Ch
0.8
1.2
V
IS = - 3 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
Body Diode Reverse Recovery Time
trr
N-Channel
IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C
P-Channel
IF = - 3 A, dI/dt = - 100 A/µs, TJ = 25 °C
N-Ch
15
30
ns
P-Ch
26
50
Body Diode Reverse Recovery Charge
Qrr
N-Ch
8
20
nC
P-Ch
13
25
Reverse Recovery Fall Time
ta
N-Ch
8
ns
P-Ch
14
Reverse Recovery Rise Time
tb
N-Ch
7
P-Ch
12
SIA519
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
www.sztuofeng.com
Feb,2018 V1.0
3
N- and P-Channel 20-V (D-S) MOSFET



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