SIA519 datasheet(2/12 Pages) TUOFENG

2 / 12 page

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

 300 µs, duty cycle  2 %.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

VGS = 0 V, ID = - 250 µA

P-Ch

- 20

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

N-Ch

mV/°C

ID = - 250 µA

P-Ch

- 11

VGS(th) Temperature Coefficient

V

GS(th)/TJ

ID = 250 µA

N-Ch

- 3.3

ID = - 250 µA

P-Ch

2.6

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.6

1.4

VDS = VGS, ID = - 250 µA

P-Ch

- 0.5

- 1.3

Gate-Body Leakage

IGSS

µA

VDS = 0 V, VGS = ± 12 V

N-Ch

± 0.1

P-Ch

± 0.1

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

N-Ch

0.1

VDS = - 20 V, VGS = 0 V

P-Ch

- 0.1

On-State Drain Currentb

ID(on)

VDS 5 V, VGS = 4.5 V

N-Ch

VDS - 5 V, VGS = - 4.5 V

P-Ch

- 10

Drain-Source On-State Resistanceb

RDS(on)

VGS = 4.5 V, ID = 4.2 A

N-Ch

0.032

0.040



VGS = - 4.5 V, ID = - 2.9 A

P-Ch

0.074

0.090

VGS = 2.5 V, ID = 3.3 A

N-Ch

0.053

0.065

VGS = - 2.5 V, ID = - 2.3 A

P-Ch

0.113

0.137

Forward Transconductanceb

gfs

VDS = 10 V, ID = 4.2 A

N-Ch

VDS = - 10 V, ID = - 2.9 A

P-Ch

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 10 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 10 V, VGS = 0 V, f = 1 MHz

N-Ch

350

P-Ch

340

Output Capacitance

Coss

N-Ch

P-Ch

105

Reverse Transfer Capacitance

Crss

N-Ch

P-Ch

Total Gate Charge

VDS = 10 V, VGS = 10 V, ID = 5.5 A

N-Ch

7.7

VDS = - 10 V, VGS = - 10 V, ID = - 3.7 A

P-Ch

10.5

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 5.5 A

P-Channel

VDS = - 10 V, VGS = - 4.5 V, ID = - 3.7 A

N-Ch

3.7

P-Ch

5.3

Gate-Source Charge

Qgs

N-Ch

0.85

P-Ch

0.75

Gate-Drain Charge

Qgd

N-Ch

0.95

P-Ch

Gate Resistance

f = 1 MHz

N-Ch

0.7

3.5



P-Ch

0.2

SIA519

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

www.sztuofeng.com

Feb,2018 V1.0

N- and P-Channel 20-V (D-S) MOSFET

SIA519 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

SIA519 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL