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SIA519 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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SIA519 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 12 page  N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) Qg (Typ.) N-Channel 20 0.040 at VGS = 4.5 V 4.2 3.7 nC 0.065 at VGS = 2.5 V 3.3 P-Channel - 20 0.090 at VGS = - 4.5 V - 2.9 5.3 nC 0.137 at VGS = - 2.5 V - 2.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.2 - 2.9 A Pulsed Drain Current IDM 15 - 15 Source Drain Current Diode Current TC = 25 °C IS 4.5 - 4.5 Maximum Power Dissipation TC = 25 °C PD 7.8 7.8 W TA = 25 °C 1.9 1.9 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t 5 s RthJA 52 65 52 65 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 12.5 16 12.5 16 SIA519 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD www.sztuofeng.com Feb,2018 V1.0 1 N- and P-Channel 20-V (D-S) MOSFET N-Channel MOSFET G1 D1 S1 S2 G2 D2 P-Channel MOSFET S1 D1 G2 S2 G1 D2 1 6 5 4 2 3 2.05 mm 2.05 mm D1 D2 DFN2X2-6L Equivalent Cir cuit MARKING EGTF YWCP Y :year code W :week code FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices |
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