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SIA519 Datasheet(PDF) 4 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # SIA519
Description  N- and P-Channel 20-V (D-S) MOSFET
PDF  12 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

SIA519 Datasheet(HTML) 4 Page - Shenzhen Tuofeng Semiconductor Technology Co

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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
0
10
20
30
40
50
0369
12
15
18
IGSS at 25 °C
VGS - Gate-to-Source Voltage (V)
0
3
6
9
12
15
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS =5 V thru 3 V
VGS =2 V
VGS =1.5 V
VGS =2.5 V
VDS - Drain-to-Source Voltage (V)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0
3
6
9
12
15
VGS =2.5 V
VGS =4.5 V
ID -Drain Current (A)
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
VGS - Gate-to-Source Voltage (V)
0
3
6
9
12
15
18
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
10-1
TJ = 150 °C
TJ = 25 °C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
TC = 25 °C
TC = 125 °C
TC = - 55 °C
VGS - Gate-to-Source Voltage (V)
0
100
200
300
400
500
024
6
8
10
12
14
16
18
20
Ciss
Coss
Crss
VDS - Drain-to-Source Voltage (V)
SIA519
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
www.sztuofeng.com
Feb,2018 V1.0
4
N- and P-Channel 20-V (D-S) MOSFET



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