LNBH26S datasheet(11/35 Pages) STMICROELECTRONICS

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Typical application circuits

Figure 6. DiSEqC 1.x application circuit

C3-A

Vin

12 V

LNBOUT-A

LX-A

VUP-A

LNBH26S

D1- A

C2- A

Vcc

Byp

FLT

ADDR

{

I2C Bus

SDA

SCL

ISEL

R1 (RSEL)

LX-B

D1- B

C2- B C3-B

LNBOUT-B

C5-B

DiSEqC

Envelope

TTL

DiSEqC

22 KHz

TTL

VUP-B

VOUT -B

VOUT-A

C5-A

D2- A

D2-B

DSQIN- A

DSQIN- B

Tone enable control

P- GND

A -GND

D3-A

D3-B

L1- A

L1- B

GIPG2801151243LM

Table 4. LNBH26S DiSEqC 1.x bill of material

Component

Notes

R1 (RSEL)

Smd resistor. Refer to Table 12. A/B section electrical characteristics and ISEL pin description in Table

1. Pin description.

> 25 V electrolytic capacitor, 100 µF or higher is suitable

> 25 V ceramic capacitor, 10 µF or higher is suitable

With COMP = 0, > 25 V electrolytic capacitor, 100 µF or higher is suitable

with COMP = 1, > 35 V ceramic capacitor, 22 µF (or 2 x 10 µF) or higher is suitable

From 470 nF to 2.2 µF ceramic capacitor placed as close as possible to VUP pins. Higher values allow

lower DC-DC noise

From 100 nF to 220 nF ceramic capacitor placed as close as possible to VOUT pins. Higher values allow

lower DC-DC noise

C4, C7

220 nF ceramic capacitors. To be placed as close as possible to VOUT pin

STPS130A or similar Schottky diode

1N4001-07, S1A-S1M, or any similar general purpose rectifier

BAT54, BAT43, 1N5818, or any low power Schottky diode with IF(AV) > 0.2 A, VRRM > 25 V, VF < 0.5 V. To

be placed as close as possible to VOUT pin

LNBH26S

Typical application circuits

DS8975 - Rev 5

page 11/35

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