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STA350B Datasheet(PDF) 18 Page - STMicroelectronics |
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STA350B Datasheet(HTML) 18 Page - STMicroelectronics |
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18 / 94 page ![]() Electrical specifications STA350B, STA350BW 18/94 DocID018572 Rev 7 3.5 Electrical specifications for the power section The specifications given in this section are valid for the operating conditions: VCC =24 V, f= 1kHz, fsw = 384 kHz, Tamb = 25° C and RL = 8 Ω, unless otherwise specified. Table 6. Electrical specifications - power section Symbol Parameter Conditions Min. Typ. Max. Unit Po Continuous output power, BTL, ternary mode THD = 1% 27 W THD = 10% 36 Continuous output power SE, binary mode, RL = 4 Ω THD = 1% 12 W THD = 10% 15.5 RdsON Power P-channel/N-channel MOSFET (total bridge) ld = 1.5 A 180 250 m Ω Idss Power P-channel/N-channel leakage VCC = 20 V 10 μA ILDT Low current dead time (static) Resistive load(1) 8 15 ns IHDT High current dead time (dynamic) I load(1) = 1.5 A 15 30 ns tr Rise time Resistive load(1) 10 18 ns tf Fall time Resistive load(1) 10 18 ns Vcc Supply voltage operating voltage 5 26 V Ivcc Supply current from Vcc in power-down PWRDN = 0 1 μA Supply current from Vcc in operation PCM input signal = -60 dBfs, Switching frequency = 384 kHz, No LC filters 52 60 mA Ivdd Supply current FFX processing (reference only) Internal clock = 49.152 MHz 55 70 mA Ilim Overcurrent limit (2) 3.0 3.8 4.0 A Isc Short-circuit protection Hi-Z output 4.0 5.0 A UVL Undervoltage protection 4.3 V OVP Overvoltage protection 29 V tmin Output minimum pulse width No load 100 ns DR Dynamic range 100 dB SNR Signal-to-noise ratio, ternary mode A-Weighted 100 dB Signal-to-noise ratio binary mode 90 dB THD+N Total harmonic distortion + noise FFX stereo mode, Po = 1 W f= 1kHz 0.09 % |
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