AP65552

Document number: DS37306 Rev. 4 - 4

3 of 13

www.diodes.com

October 2018

© Diodes Incorporated

AP65552

PART OBSOLETE

– NO ALTERNATE PART

Absolute Maximum Ratings (Note 4) (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Rating

Unit

VIN

Supply Voltage

-0.3 to +20

V

VREG5

VREG5 Pin Voltage

-0.3V to +6.0

V

VSW

Switch Node Voltage

-1.0 to VIN +0.3

V

VBS

Bootstrap Voltage

-0.3 to VSW +6.0

V

VFB

Feedback Voltage

-0.3V to +6.0

V

VEN

Enable/UVLO Voltage

-0.3V to +6.0

V

VSS

Soft-Start PIN

-0.3V to +6.0

V

VGND

GND Pin Voltage

-0.3 to +0.3

V

TST

Storage Temperature

-65 to +150

°C

TJ

Junction Temperature

+160

°C

TL

Lead Temperature

+260

°C

ESD Susceptibility (Note 5)

HBM

Human Body Model

2

kV

MM

Machine Model

200

V

Notes:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may

be affected by exposure to absolute maximum rating conditions for extended periods of time.

5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when

handling and transporting these devices.

Thermal Resistance (Note 6)

Symbol

Parameter

Rating

Unit

θJA

Junction to Ambient

SO-8EP

39.4

°C/W

θJC

Junction to Case

SO-8EP

8.6

°C/W

Recommended Operating Conditions (Note 7) (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Min

Max

Unit

VIN

Supply Voltage

4.5

18.0

V

TJ

Operating Junction Temperature Range

-40

+125

°C

TA

Operating Ambient Temperature Range

-40

+85

°C

Notes:

6. Test condition: SO-8: Device mounted on 2" x 2" FR-4 substrate PC board, 2oz copper with minimum recommended pad layout.

7. The device function is not guaranteed outside of the recommended operating conditions.