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AP3128 Datasheet(PDF) 6 Page - Diodes Incorporated |
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AP3128 Datasheet(HTML) 6 Page - Diodes Incorporated |
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6 / 12 page ![]() AP3128 Document number: DS43487 Rev. 3 - 2 6 of 12 www.diodes.com September 2021 © Diodes Incorporated AP3128 Electrical Characteristics (@TA = +25°C, VCC = 16V, unless otherwise specified.) Symbol Parameter Condition Min Typ Max Unit tDELAY-OLP Delay of Overcurrent Protection (Note 5) — — 64 — ms IFB-SOURCE Source Current VFB = 0V — 0.15 — mA VBURST-OFF Input Voltage for Zero Duty — 0.45 0.5 0.55 V VBURST-ON — — 0.63 0.70 0.77 V Output Section (GATE Pin) VGATE-L Output Low-Level Voltage IO = 10mA, VCC = 18V — — 0.8 V VGATE-H Output High-Level Voltage IO = 10mA, VCC = 18V 7 — — V VGATE-CLP Output Clamping Voltage — 8 9.5 12 V tGATE-RISE Rising Time (Note 5) CL = 1nF, VCC = 18V — 70 — ns tGATE-FALL Falling Time (Note 5) CL = 1nF, VCC = 18V — 20 — ns De-magnetization Section (DEM Pin) VQR De-Magnetization Voltage (Note 5) — — 100 — mV VTH-SOVP SOVP Threshold — 3 3.2 3.4 V VTH-SUVP SUVP Threshold — 0.34 0.4 0.46 V tSAMPLE Sample Delay Time (Note 5) — — 1.2 — µs Internal OTP Section OTP OTP Threshold — — +150 — °C THYS OTP Recovery Hysteresis — — +25 — °C Note: 5. Guaranteed by design. |
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