Final Datasheet

10

Revision 1.6

www.infineon.com

2022-06-26

CIPOS™ Micro

IM241 Series

Static Parameters

6

Static Parameters

6.1

Inverter

(VDD-VSS) = (VB- VS) = 15 V. TC = 25°C unless otherwise specified.

Table 8

IM241-S6 (B and J type)

Parameter

Symbol Conditions

Min.

Typ.

Max.

Units

Collector-to-emitter

saturation voltage

VCE(sat)

IC = 0.2A

-

1.18

-

V

IC = 0.5A

-

1.55

1.78

V

IC = 0.5A, TJ = 150℃

-

1.58

-

V

Collector emitter leakage

current of high side IGBT

ILKH

VIN = 0V, V+ = 600V

-

-

80

µA

VIN = 0V, V+ = 600V, TJ

= 150°C

-

10.7

-

µA

Diode forward voltage

VF

IC = 0.2A

-

1.23

-

V

IC = 0.5A

-

1.53

1.77

V

IC = 0.5A, TJ = 150℃

-

1.49

-

V

6.2

Control

(VDD- VSS) = (VB- VS) = 15 V. TC = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to VSS

and are applicable to all six channels. The VDDUVparameters are referenced to VSS. The VBSUV parameters are

referenced to VS.

Table 9

Parameter

Symbol

Min.

Typ.

Max.

Units

Logic “1” input voltage (LIN, HIN)

VIN,TH+

2.2

-

-

V

Logic “0” input voltage (LIN, HIN)

VIN,TH-

-

-

0.8

V

VDD/VBSsupply undervoltage, positive going

threshold

VDD,UV+,

VBS,UV+

10.6

11.1

11.6

V

VDD/VBS supply undervoltage, negative going

threshold

VDD,UV-,

VBS,UV-

10.4

10.9

11.4

V

VDD/VBS supply undervoltage lock-out

hysteresis

VDDUVH,

VBSUVH

-

0.2

-

V

RFE positive going threshold

VRFE+

-

1.9

2.2

V

RFE negative going threshold

VRFE-

0.8

1.1

-

V

ITRIP positive going threshold

VIT,TH+

0.475

0.500

0.525

V

ITRIP negative going threshold

VIT,TH-

-

0.430

-

V

ITRIP input hysteresis

VIT,HYS

-

0.07

-

V

Quiescent VBS supply current

IQBS

-

-

70

µA

Quiescent VDD supply current per channel

IQDD

-

-

3

mA

Input bias current VIN=5V for LIN, HIN

IIN+

-

6.25

12.5

µA

Input bias current VIN=5V for RFE

IIN,RFE+

-

-

1

µA