Data Sheet

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

AP2114

Jan. 2013 Rev. 2. 2

BCD Semiconductor Manufacturing Limited

12

Electrical Characteristics (Continued)

AP2114-3.3 Electrical Characteristics (Note 2)

(VIN=4.3V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OC≤TA≤85OC

ranges, unless otherwise specified (Note 3))

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Output Voltage

VOUT

VIN =4.3V, 1mA ≤ IOUT ≤ 30mA

VOUT

×98.5%

3.3

VOUT

×101.5%

V

Maximum Output Current

IOUT(MAX)

VIN =4.3V, VOUT=3.25V to 3.35V

1.0

A

Load Regulation

△

VOUT/VOUT

I

△ OUT

VIN=4.3V, 1mA ≤ IOUT ≤1A

0.2

1.0

%/A

Line Regulation

△

VOUT/VOUT

V

△ IN

4.3V≤VIN≤6V, IOUT=30mA

-0.1

0.02

0.1

%/V

Dropout Voltage

VDROP

IOUT=1A

450

750

mV

Quiescent Current

IQ

VIN=4.3V, IOUT=0mA

65

90

μA

Power

Supply

Rejection

Ratio

PSRR

Ripple 1Vp-p

VIN=4.3V,

IOUT=100mA

f=100Hz

65

dB

f=1KHz

65

Output Voltage

Temperature Coefficient

△

VOUT/VOUT

△

T

IOUT=30mA

±30

ppm/°C

Short Current Limit

ISHORT

VOUT=0V

50

mA

RMS Output Noise

VNOISE

10Hz ≤ f ≤100kHz (No load)

30

μVRMS

VEN High Voltage

VIH

Enable logic high, regulator on

1.5

V

VEN Low Voltage

VIL

Enable logic low, regulator off

0.4

Standby Current

ISTD

VIN=4.3V, VEN in OFF mode

0.01

1.0

μA

Start-up Time

tS

No Load

20

μs

EN Pull Down Resistor

RPD

3.0

M

Ω

VOUT Discharge Resistor

RDCHG

Set EN pin at Low

60

Ω

Thermal

Shutdown

Temperature

TOTSD

160

°C

Thermal

Shutdown

Hysteresis

THYOTSD

25

Thermal Resistance

(Junction to Case)

θJC

SOIC-8

74.6

°C/W

PSOP-8

43.7

SOT-223

50.9

TO-252-2 (1) /(3) /(4)

35

TO-263-3

22

Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input

voltage must be applied before a current source load is applied.

Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.