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ATECC608A Datasheet(PDF) 64 Page - Microchip Technology |
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ATECC608A Datasheet(HTML) 64 Page - Microchip Technology |
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64 / 81 page ![]() 8. Electrical Characteristics 8.1 Absolute Maximum Ratings Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C Maximum Operating Voltage 6.0V DC Output Current 5.0 mA Voltage on any pin -0.5V to (VCC + 0.5V) -0.5V to (VCC + 0.5V) ESD Ratings: Human Body Model(HBM) ESD >4kV Charge Device Model(CDM) ESD >1kV Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 8.2 Reliability The ATECC608A-TNGLoRaWAN is fabricated with Microchip’s high reliability CMOS EEPROM manufacturing technology. Table 8-1. EEPROM Reliability Parameter Min. Typ. Max. Units Write Endurance at +85°C (Each Byte) 400,000 — — Write Cycles Data Retention at +55°C 10 — — Years Data Retention at +35°C 30 50 — Years Read Endurance Unlimited Read Cycles 8.3 AC Parameters: All I/O Interfaces Figure 8-1. AC Timing Diagram: All Interfaces Data Comm Wake tLIGNORE tHIGNORE Noise Suppresion tWLO tWHI ATECC608A-TNGLoRaWAN Electrical Characteristics © 2020 Microchip Technology Inc. Complete Datasheet DS40002154B-page 64 |
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