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EM4170 Datasheet(PDF) 3 Page - EM Microelectronic - MARIN SA

Part # EM4170
Description  125kHz CRYPTO READ/WRITE Contactless Identification Device
PDF  13 Pages
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Manufacturer  EMMICRO [EM Microelectronic - MARIN SA]
Direct Link  http://www.emmicroelectronic.com
Logo EMMICRO - EM Microelectronic - MARIN SA

EM4170 Datasheet(HTML) 3 Page - EM Microelectronic - MARIN SA

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EM4170
Copyright
 2002, EM Microelectronic-Marin SA
3
www.emmicroelectronic.com
Absolute Maximun Ratings
Operating Conditions
Parameter
Symbol
Min.
Max.
Units
Parameter
Symbol
Min.
Typ.
Max. Units
Supply Voltage
(Unregulated)
VPOS-REG
-0.3
9.5
V
Operating
Temperature
TOP
-40
+25
+85
°C
Supply Voltage
(regulated)
VDD
-0.3
5.5
V
Maximum coil
current
ICOIL
-10
+10
mA
Voltage at remaining
pins Excepted COIL1,
COIL2
VPIN
VSS - 0.3 VDD + 0.3
V
Frequency on
Coil inputs
FCOIL
100
125
150
kHz
Storage temperature
Tstore
-55
+ 125
°C
Electrostatic discharge
(Mil-STD-883 C method
3015)
VESD
1000
V
Maximum Current
induced on COIL1 and
COIL2
ICOIL
-30
+ 30
mA
Handling Procedure
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond specified
electrical characteristics may affect device reliability
Electrical parameters and functionality are not guaranteed
when the circuit is exposed to light.
This device has built-in protection against high static
voltages
or
electric
fields;
however,
anti-static
precautions should be taken as for any other CMOS
component.
Unless
otherwise
specified,
proper
operation can only occur when all terminal voltages are
kept within the supply voltage range.
Electrical Characteristics
VDD = VPOS_REG = 2.5V, VSS = 0V, fcoil = 125 kHz Sine wave, Vcoil = 1Vpp, Top = 25°C unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Supply Voltage(unregulated)
VPOS-REG
VPOS_REG = max (note 1)
1)
V
Supply Voltage (regulated)
VDD
Read Mode
(note 2)
2.8
3.5
4.2
V
EEPROM read voltage
VRD
2.0
V
EEPROM write voltage
VEE
2.5
V
Supply current / read
Ird
Read Mode VDD =2.0V
5.0
µA
Supply current /write @25°C
Iwr25
Write Mode, VDD =2.5V
30
38
µA
Supply current / write
Iwr
Write Mode, VDD =2.6V
-40°C<T<85°C
70
µA
Modulator voltage drop
VON
V
Coil1 - VSS and VCoil2 - VSS
Icoil = 100µA
V
Coil1 - VSS and VCoil2 - VSS
Icoil = 5mA
0.30
0.45
0.60
2.50
V
V
Resonnance Capacitor
Cr
10 kHz, 100 mVpp
170
200
230
pF
Capacitor temp. coeff
TKCr
-40°C to 85°C
-75
+75
ppm/K
Capacitor tolerance/wafer
TOLCr
-2
+2
%
POR level high
Vprh
Rising Supply
2.0
2.4
V
POR level low
Vprl
Falling Supply
1.8
2.2
V
Clock extractor input min
Vclkmin
Min for clock extraction
0.6
0.36
Vpp
Clock extractor input max
Vclkmax
Max for clock extraction
50
mVpp
EEPROM data endurance
Ncy
Erase all / Write all
100000
cycles
EEPROM retention
Tret
Top = 55°C after 100'000 cycles
(note 3)
10
years
Note 1 : Maximum voltage is defined by forcing 10mA on Coil1-Coil2
Note 2 : The circuit is not functional below the POR-level
Note 3 : Based on 1000 hours at 150°C



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