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SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK4213

Document No. D19565EJ1V0DS00 (1st edition)

Date Published December 2008 NS

Printed in Japan

2008

DESCRIPTION

The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES

• Low on-state resistance

RDS(on)1 = 6.0 m

Ω MAX. (VGS = 10 V, ID = 30 A)

RDS(on)2 = 9.5 m

Ω MAX. (VGS = 4.5 V, ID = 20 A)

• Low total gate charge

QG = 34 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)

• 4.5 V drive available

• Avalanche capability ratings

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

2SK4213-ZK-E1-AY

Note

2SK4213-ZK-E2-AY

Note

Pure Sn (Tin)

Tape 2500 p/reel

TO-252 (MP-3ZK) typ. 0.27 g

Note Pb-free (This product does not contain Pb in external electrode).

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

25

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25

°C)

ID(DC)

±64

A

Drain Current (pulse)

Note1

ID(pulse)

±192

A

Total Power Dissipation (TC = 25

°C)

PT1

45

W

Total Power Dissipation (TA = 25

°C)

PT2

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

Note2

IAS

21

A

Single Avalanche Energy

Note2

EAS

44

mJ

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Starting Tch = 25

°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH

(TO-252)