Data Sheet D19565EJ1V0DS

6

2SK4213

PACKAGE DRAWINGS (Unit: mm)

TO-252 (MP-3ZK)

6.5

±0.2

2.3

±0.1

0.5

±0.1

0.76

±0.12

0 to 0.25

0.5

±0.1

1.0

No Plating

No Plating

5.1 TYP.

4.3 MIN.

1

4

23

1.14 MAX.

2.3

2.3

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Body

Diode

Source

Drain

Gate

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the

device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate

it once, when it has occurred.