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DS20005693G-page 5

MIC28514

PG Low Voltage

VPG_LOW

—70

200

mV

VFB < 90% × VNOM,

IPG =1mA

Thermal Protection

Overtemperature Shutdown

TSHD

—

+150

—

°C

TJ rising (Note 4)

Overtemperature Shutdown

Hysteresis

TSHD_HYS

—+15

—

°C

(Note 4)

TEMPERATURE SPECIFICATIONS

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Junction Operating Temperature

TJ

–40

—

+125

°C

Note 1

Storage Temperature Range

TS

–65

—

+150

°C

Junction Temperature

TJ

—

—

+150

°C

Lead Temperature

TLEAD

—

—

+260

°C

Soldering, 10s

Package Thermal Resistance

Thermal Resistance, 6 mm x 6 mm,

VQFN-32LD

JA

—33.3

—

°C/W

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the

maximum allowable power dissipation will cause the device operating junction temperature to exceed the

maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.

ELECTRICAL CHARACTERISTICS(1) (CONTINUED)

Electrical Characteristics: PVIN =12V, VOUT =5V, VDD =5V, VBST – VSW =5V; fSW = 300 kHz, RCL = 1.42 k,

L= 8.2 µH; TA = +25°C, unless noted. Boldface values indicate -40°C ≤ TJ ≤ +125°C.

(Note 3)

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Note 1: Specification for packaged product only.

2: The ICL is trimmed to get the current in the limits at room temperature.

3: Temperature limits apply for automotive AEC-Q104 qualified part.

4: Not production tested. Specification obtained by characterization.