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DP83231 Datasheet(PDF) 8 Page - National Semiconductor (TI) |
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DP83231 Datasheet(HTML) 8 Page - National Semiconductor (TI) |
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8 / 16 page ![]() 40 Electrical Characteristics (Continued) 43 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Min Max Units VIC Input Clamp Voltage IIN e 18 mA b 15 V VOH High Level TTL Outputs IOH eb400 mAVCC b 2V Output Voltage ECL Outputs VCC b 1025 VCC b 880 mV 50X Load to VCC b 2V VOL Low Level TTL Outputs IOL e 4 mA 05 V Output Voltage ECL Outputs VCC b 1810 VCC b 1620 mV 50X Load to VCC b 2V II Max High Level TTL Inputs VIN e 7V 100 m A Input Current IIH High Level TTL Inputs VIN e 27V b 20 20 m A Input Current IIL Low Level TTL Inputs VIN e 04V b 20 20 m A Input Current Ifilter Charge Pump Current Source b 03 b 07 mA Sink 03 07 mA TRI-STATE b 500 500 nA ICC Supply Current 180 mA Includes 60 mA due to external ECL termination of two differential signals For 100k ECL output buffers output levels are specified as VOH max e VCC b 088V VOL max e VCC b 162V Since the outputs are differential the average output level is VCC b 125V The test load per output is 50X at VCC b 2V The external load current through this 50X resistor is thus I load e (VCC b 125) b (VCC b 2) 50A e 0015A e 15 mA There are 2 pairs of differential ECL signals so the total ECL current is 60 mA 44 AC ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Min Max Units T1 Phase Difference b 22 ns T2 RXC Pos Pulse Width (Note 1) 3 5 ns T3 CLK DET Time CRD EN Neg Pulse Width e 1 ms 100 m s (Valid DATA g Present) T4 Valid Data Time CRD EN e High 100 m s Note 1 These parameters are not tested but are assured by correlation with characterization data 8 |
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