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S71GS256 Datasheet(PDF) 141 Page - SPANSION |
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S71GS256 Datasheet(HTML) 141 Page - SPANSION |
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141 / 195 page  October 4, 2004 cellRAM_00_A0 CellularRAM Type 2 141 Ad vance Info rmat i o n Note: Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. Figure 44. Four-word Burst READ Operation—Variable Latency tOHZ tOLZ High-Z High-Z tCBPH Don't Care Undefined Legend: tCEW High-Z VIH VIL VIH VIL VIH VIL VIH VIL VIH VIL VOH VOL VOH VOL A[22:0] ADV# CE# LB#/UB# DQ[15:0] WAIT tSP tCSP tBOE tABA tSP tHD tHD VIH VIL OE# WE# tSP tHD tSP tHD READ Burst Identified (WE# = HIGH) Valid Address tCLK tKHKL tKP tKP VIH VIL CLK tHD tHZ VALID OUTPUT VALID OUTPUT VALID OUTPUT VALID OUTPUT tKHTL tKOH tACLK |
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