BLF245 datasheet(6/12 Pages) PHILIPS

6 / 12 page

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF245

APPLICATION INFORMATION FOR CLASS-B OPERATION

Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 1 kΩ.

RF performance in CW operation in a common source class-B test circuit.

MODE OF OPERATION

(MHz)

VDS

(V)

IDQ

(mA)

(W)

(dB)

ηD

(%)

(

Ω)

(note 1)

(

Ω)

CW, class-B

175

> 13

typ. 15.5

< 50

typ. 67

2.0

− j2.7

3.9

+ j4.4

175

12.5

typ. 12

typ. 66

2.4

− j2.5

3.8

+ j1.3

Note

1. R1 included.

Ruggedness in class-B operation

The BLF245 is capable of withstanding a load mismatch

corresponding to VSWR = 50 through all phases under

the following conditions:

Th =25 °C; Rth mb-h = 0.3 K/W; at rated load power.

Fig.9

Power gain and efficiency as functions of

load power, typical values.

Class-B operation; VDS = 28 V; IDQ =50mA;

f = 175 MHz; Th =25 °C; Rth mb-h = 0.3 K/W.

handbook, halfpage

100

MGP172

(dB)

PL (W)

ηD

(%)

ηD

Fig.10 Load power as a function of input power,

typical values.

Class-B operation; VDS = 28 V; IDQ =50mA;

f = 175 MHz; Th =25 °C; Rth mb-h = 0.3 K/W.

handbook, halfpage

0.6

2.4

MEA736

1.2

(W)

PIN (W)

1.8

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