September 1992

3

Philips Semiconductors

Product specification

VHF power MOS transistor

BLF245

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

gate-source voltage

−

20

V

DC drain current

−

6A

total power dissipation

−

68

W

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

thermal resistance from

junction to mounting base

2.6 K/W

thermal resistance from

mounting base to heatsink

0.3 K/W

Fig.2 DC SOAR.

handbook, halfpage

1

10

110

ID

(A)

VDS (V)

(1)

MRA921

(2)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

handbook, halfpage

0

40

80

160

100

80

40

20

0

60

120

MGP167

Ptot

(W)

Th (°C)

(1)

(2)