BLF245 datasheet(4/12 Pages) PHILIPS

4 / 12 page

September 1992

Philips Semiconductors

Product speciﬁcation

VHF power MOS transistor

BLF245

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID =10mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS = 28 V

−−

2mA

IGSS

gate-source leakage current

±VGS = 20 V; VDS = 0

−−

µA

VGS(th)

gate-source threshold voltage

ID = 10 mA; VDS = 10 V

−

4.5

∆V

gate-source voltage difference of

matched devices

ID = 10 mA; VDS = 10 V

−−

100

gfs

forward transconductance

ID = 1.5 A; VDS = 10 V

1.2

1.9

−

RDS(on)

drain-source on-state resistance

ID = 1.5 A; VGS = 10 V

−

0.4

0.75

Ω

IDSX

on-state drain current

VGS = 10 V; VDS = 10 V

−

Cis

input capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

125

−

Cos

output capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

Crs

feedback capacitance

VGS = 0; VDS = 28 V; f = 1 MHz

−

noise ﬁgure (see Fig.14)

input and output power matched for:

ID = 1 A; VDS =28V; PL =30W;

R1 = 1 k

Ω; Th =25 °C; f = 175 MHz

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

VDS = 10 V; valid for Tj = 25 to 125 °C.

handbook, halfpage

−6

T.C.

(mV/K)

ID (mA)

−2

−4

MGP168

102

103

104

Fig.5

Drain current as a function of gate-source

voltage, typical values.

VDS =10V.

handbook, halfpage

020

MGP169

(A)

VGS (V)

Tj = 25 °C

125

°C

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