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BLF245 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BLF245 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 12 page ![]() September 1992 7 Philips Semiconductors Product specification VHF power MOS transistor BLF245 Fig.11 Power gain and efficiency as functions of load power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 175 MHz; Th =25 °C; Rth mb-h = 0.3 K/W. handbook, halfpage 010 20 20 0 10 100 0 50 MGP173 Gp (dB) PL (W) ηD (%) ηD Gp Fig.12 Load power as a function of input power, typical values. Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 175 MHz; Th =25 °C; Rth mb-h = 0.3 K/W. handbook, halfpage 20 0 0.6 2.4 0 MEA737 1.2 PIN (W) PL (W) 10 1.8 Fig.13 Test circuit for class-B operation. f = 175 MHz. handbook, full pagewidth MGP174 50 Ω input C1 C3 C4 C5 L1 L2 D.U.T. L3 L6 L4 R1 R2 Zi C2 C10 C9 +VGG +VDD C8 C7 L5 R3 C6 50 Ω output |
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