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BLF276 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLF276 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 13 page ![]() December 1997 5 Philips Semiconductors Product specification VHF power MOS transistor BLF276 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 3 A; VGS = 10 V. handbook, halfpage 0 0.2 0.4 0.6 0.8 1 020 40 RDS (on) ( Ω) 60 80 100 Tj (°C) 120 140 MRA944 Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 100 200 300 400 500 600 010 20 C (pF) 30 VDS (V) Cis Cos 40 50 MRA934 Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 10 20 30 40 50 010 Crs (pF) 20 30 VDS (V) 40 50 MRA935 |
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