December 1997

3

Philips Semiconductors

Product specification

VHF power MOS transistor

BLF276

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

110

V

gate-source voltage

−

20

V

DC drain current

−

9A

total power dissipation

−

150

W

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

thermal resistance from junction to

mounting base

max. 1.17 K/W

Fig.2 DC SOAR.

handbook, halfpage

1

ID

(A)

10

110

VDS (V)

(1)

MRA936

(2)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

handbook, halfpage

0

40

80

120

160

200

240

020

Ptot

(W)

40

60

80

100

Tmb (°C)

120

140

(1)

(2)

MRA943