BLV57 datasheet(6/24 Pages) PHILIPS

6 / 24 page

1998 Feb 09

Philips Semiconductors

Product speciﬁcation

UHF linear push-pull power transistor

BLV57

CHARACTERISTICS apply to either transistor section unless otherwise speciﬁed

Tj =25°C

Notes

1. Measured under pulse conditions: tp ≤ 300 µs; δ≤ 0,02.

2. Measured under pulse conditions: tp ≤ 50 µs; δ≤ 0,01.

The graphs apply to either transistor section.

Collector-emitter breakdown voltage

VBE = 0; IC = 10 mA

V(BR)CES

〉

50 V

open base; IC = 25 mA

V(BR)CEO

〉

27 V

Emitter-base breakdown voltage

open collector; IE = 5 mA

V(BR)EBO

〉

3,5 V

Collector cut-off current

VBE = 0; VCE = 27 V

ICES

〈

10 mA

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

ESBO

〉

2mJ

RBE =10 Ω

ESBR

〉

2mJ

D.C. current gain(1)

〉

typ.

IC = 0,85 A; VCE = 25 V

hFE

D.C. current gain ratio of transistor sections

IC = 0,85 A; VCE = 25 V

0,67 to 1,5

Collector-emitter saturation voltage(1)

IC = 1,7 A; IB = 0,17 A

VCEsat

typ.

0,75 V

Transition frequency at f = 100 MHz(2)

−IE = 0,85 A; VCB = 25 V

typ.

2,5 GHz

−I

E = 1,7 A; VCB = 25 V

typ.

2,5 GHz

Collector capacitance at f = 1 MHz

typ.

〈

IE =Ie = 0; VCB = 25 V

Feedback capacitance at f = 1 MHz

IC = 50 mA; VCE = 25 V

Cre

typ.

15 pF

Collector-ﬂange capacitance

Ccf

typ.

2 pF

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