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BLW83 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLW83 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 11 page ![]() August 1986 6 Philips Semiconductors Product specification HF/VHF power transistor BLW83 APPLICATION INFORMATION R.F. performance in s.s.b. class-A operation (linear power amplifier) VCE = 26 V; f1 = 28,000 MHz; f2 = 28,001 MHz Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. OUTPUT POWER W Gp dB IC A d3 dB(1) d5 dB(1) Th °C > 10 (P.E.P.) > 20 1,35 −40 <−40 70 typ. 11 (P.E.P.) typ. 12 (P.E.P.) typ. 24 1,35 −40 <−40 25 Fig.8 Test circuit; s.s.b. class-A. handbook, full pagewidth 50 Ω MGP592 50 Ω L3 L1 R3 R4 L5 T.U.T. L4 C10 C5 C7 C8 C6 C11 C12 C1 C2 C3 C4 L2 R2 R1 C9 R7 R9 +VCC R5 R8 R6 BY206 BD204 |
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