August 1986

7

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW83

List of components in Fig.8:

C1

=

C2 = 10 to 780 pF film dielectric trimmer

C3

=

22 nF ceramic capacitor (63 V)

C4

=

47

µF/10 V electrolytic capacitor

C5

=

56 pF ceramic capacitor (500 V)

C6

=

47

µF/35 V electrolytic capacitor

C7

=

C8 = 220 nF polyester capacitor

C9

=

10

µF/35 V electrolytic capacitor

C10 =

C11 = 7 to 100 pF film dielectric trimmer

C12 =

82 pF ceramic capacitor (500 V)

L1

=

3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads to 2

× 5 mm

L2

=

L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)

L4

=

11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm

L5

=

14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm

R1

=

600

Ω; parallel connection of 2 × 1,2 kΩ carbon resistors (±5%; 0,5 W each)

R2

=

15

Ω carbon resistor (±5%; 0,25 W)

R3

=

1,2

Ω; parallel connection of 4 × 4,7 Ω carbon resistors (±5%; 0,125 W each)

R4

=

33

Ω carbon resistor (±5%; 0,25 W)

R5

=

18

Ω carbon resistor (±5%; 0,25 W)

R6

=

120

Ω wirewound resistor (±5%; 5,5 W)

R7

=

1

Ω carbon resistor (±5%; 0,125 W)

R8

=

47

Ω wirewound potentiometer (3 W)

R9

=

1,57

Ω; parallel connection of 3 × 4,7 Ω wirewound resistors ( 5%; 5,5 W each)

Fig.9

Intermodulation distortion as a function of output power.

handbook, halfpage

0

5

10

15

−20

−60

−40

MGP593

d3

(dB)

P.E.P. (W)

IC = 0.8 A 1 A 1.35 A