BLW83 datasheet(4/11 Pages) PHILIPS

4 / 11 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW83

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Note

1. Measured under pulse conditions: tp ≤ 200 µs; δ≤ 0,02.

Collector-emitter breakdown voltage

VBE = 0; IC = 10 mA

V(BR)CES

65 V

Collector-emitter breakdown voltage

open base; IC = 50 mA

V(BR)CEO

36 V

Emitter-base breakdown voltage

open collector; IE = 10 mA

V(BR)EBO

Collector cut-off current

VBE = 0; VCE = 36 V

ICES

4mA

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

ESBO

8mJ

RBE =10 Ω

ESBR

8mJ

D.C. current gain (1)

typ.

IC = 1,25 A; VCE =5 V

hFE

10 to 100

D.C. current gain ratio of matched devices(1)

IC = 1,25 A; VCE =5 V

hFE1/hFE2

1,2

Collector-emitter saturation voltage(1)

IC = 3,75 A; IB = 0,75 A

VCEsat

typ.

1,5 V

Transition frequency at f = 100 MHz(1)

−IE = 1,25 A; VCB = 28 V

typ.

530 MHz

−I

E = 3,75 A; VCB = 28 V

typ.

530 MHz

Collector capacitance at f = 1 MHz

IE =Ie =0;VCB = 28 V

typ.

50 pF

Feedback capacitance at f = 1 MHz

IC = 100 mA; VCE = 28 V

Cre

typ.

31 pF

Collector-ﬂange capacitance

Ccf

typ.

2 pF

Fig.4 Typical values; VCE = 28 V.

handbook, halfpage

012

MGP588

(A)

VBE (V)

Th = 70 °C

°C

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