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BLW86 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLW86 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 15 page ![]() August 1986 6 Philips Semiconductors Product specification HF/VHF power transistor BLW86 APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th =25 °C List of components: L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/6". R1 = R2 = 10 Ω carbon resistor Component layout and printed-circuit board for 175 MHz test circuit see Fig.9. f (MHz) VCE (V) PL (W) PS (W) GP (dB) IC (A) η (%) zi (Ω) YL (mS) 175 28 45 < 8 > 7,5 < 2,47 > 70 0,7 + j1,3 110 − j62 C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor C5 = 100 nF polyester capacitor C6a = 2,2 pF ceramic capacitor (500 V) C6b = 1,8 pF ceramic capacitor (500 V) C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) L1 = 14 nH; 1 turn Cu wire (1,6 mm); int. dia. 7,7 mm; leads 2 × 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 80 nH; 3 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 8,0 mm; leads 2 × 5 mm L7 = 62 nH; 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 8,1 mm; leads 2 × 5 mm Fig.8 Test circuit; c.w. class-B. handbook, full pagewidth C7 50 Ω 50 Ω MGP604 ,, ,, ,, C1 C2 C3b C3a C6a C4 C5 R2 L3 C6b C8 L1 L2 L4 R1 L5 L7 T.U.T. L6 L8 +VCC |
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