BLW86 datasheet(4/15 Pages) PHILIPS

4 / 15 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW86

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Collector-emitter breakdown voltage

VBE =0;IC =25mA

V(BR)CES

65 V

Collector-emitter breakdown voltage

open base; IC = 100 mA

V(BR)CEO

36 V

Emitter-base breakdown voltage

open collector; IE =10mA

V(BR)EBO

Collector cut-off current

VBE = 0; VCE =36V

ICES

10 mA

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

ESBO

8mJ

RBE =10 Ω

ESBR

8mJ

D.C. current gain(1)

IC = 2,5 A; VCE =5V

hFE

typ.

10 to 80

D.C. current gain ratio of matched devices(1)

IC = 2,5 A; VCE =5 V

hFE1/hFE2

1,2

Collector-emitter saturation voltage(1)

IC = 7,5 A; IB = 1,5 A

VCEsat

typ.

1,5 V

Transition frequency at f = 100 MHz(1)

−IE = 2,5 A; VCB = 28 V

typ.

570 MHz

−IE = 7,5 A; VCB = 28 V

typ.

570 MHz

Collector capacitance at f = 1 MHz

IE =Ie = 0; VCB =28V

typ.

82 pF

Feedback capacitance at f=1MHz

IC = 100 mA; VCE =28V

Cre

typ.

54 pF

Collector-ﬂange capacitance

Ccf

typ.

2 pF

Note

1. Measured under pulse

conditions: tp ≤ 200 µs; δ≤ 0,02.

Fig.4

Typical values;

VCE = 28 V.

handbook, halfpage

0.5

1.5

MGP632

Th = 70 °C

°C

(A)

VBE (V)

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