August 1986

13

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW86

List of components in Fig.21:

C1 = C2 = 10 to 780 pF film dielectric trimmer

C3 = 22 nF ceramic capacitor (63 V)

C4 = 47

µF/10 V electrolytic capacitor

C5 = 56 pF ceramic capacitor (500 V)

C6 = 47

µF/35 V electrolytic capacitor

C7 = C8 = 220 nF polyester capacitor

C9 = 10

µF/35 V electrolytic capacitor

C10 = 10 to 210 pF film dielectric trimmer

C11 = 15 to 575 pF film dielectric trimmer

L1 = 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2

× 5 mm

L2 = L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)

L4 = 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm

L5 = 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm

R1 = 600

Ω; parallel connection of 2 × 1,2 kΩ carbon resistors (±5%; 0,5 W each)

R2 = 15

Ω carbon resistor (±5%; 0,25 W)

R3 = 1,2

Ω; parallel connection of 4 × 4,7 Ω carbon resistors (±5%; 0,125 W each)

R4 = 33

Ω carbon resistor (±5%; 0,25 W)

R5 = 18

Ω carbon resistor (±5%; 0,25 W)

R6 = 120

Ω wirewound resistor (±5%; 5,5 W)

R7 =

1

Ω carbon resistor (±5%; 0,125 W)

R8 = 47

Ω wirewound potentiometer (3 W)

R9 = 1,57

Ω; parallel connection of 3 × 4,7 Ω wirewound resistors (±5%; 5,5 W each)

handbook, halfpage

030

−20

−30

−50

−60

−40

10

20

P.E.P. (W)

MGP648

IC = 1.4 A

1.55 A

1.7 A

d3

(dB)