August 1986

2

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW86

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

AB and B operated h.f. and v.h.f.

transmitters with a nominal supply

voltage of 28 V. The transistor is

resistance stabilized and is

guaranteed to withstand severe load

mismatch conditions. Matched

It has a 3/8" flange envelope with a

ceramic cap. All leads are isolated

from the flange.

QUICK REFERENCE DATA

MODE OF

OPERATION

V

f

MHz

W

dB

η

%

Ω

mS

dB

c.w. (class-B)

28

175

45

> 7,5

>

70

0,7

+ j1,3 110 − j62

−

s.s.b. (class-AB)

28

1,6

− 28

5

−47,5 (P.E.P.) typ. 19

typ. 45

−−

typ.

−30

s.s.b. (class-A)

26

1,6

− 28

17 (P.E.P.)

typ. 22

−−

−

typ.

−42

PIN CONFIGURATION

handbook, halfpage

e

c

b

MBB012

Fig.1 Simplified outline and symbol.

halfpage

1

23

4

MSB057

PINNING - SOT123

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.