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BLW86 Datasheet(PDF) 12 Page - NXP Semiconductors |
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BLW86 Datasheet(HTML) 12 Page - NXP Semiconductors |
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12 / 15 page ![]() August 1986 12 Philips Semiconductors Product specification HF/VHF power transistor BLW86 Ruggedness in s.s.b. operation The BLW86 is capable of withstanding a load mismatch (VSWR = 50) under the following conditions: class-AB operation; f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Th =70 °C and PLnom = 50 W P.E.P. R.F. performance in s.s.b. class-A operation (linear power amplifier) VCE = 26 V; f1 = 28,000 MHz; f2 = 28,001 MHz Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. OUTPUT POWER W GP dB IC A d3 dB(1) d5 dB(1) Th °C 17 (P.E.P.) typ. 22 1,7 typ. −40 <−40 70 17 (P.E.P.) typ. 22 1,7 typ. −42 <−40 25 Fig.21 Test circuit; s.s.b. class-A. handbook, full pagewidth 50 Ω MGP647 50 Ω L3 L1 R3 R4 L5 T.U.T. L4 C10 C5 C7 C8 C6 C11 C1 C2 C3 C4 L2 R2 R1 C9 R7 R9 +VCC R5 R8 R6 BY206 BD204 |
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