BLW86 datasheet(3/15 Pages) PHILIPS

3 / 15 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW86

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (VBE =0)

peak value

VCESM

max.

65 V

Collector-emitter voltage (open base)

VCEO

max.

36 V

Emitter-base voltage (open-collector)

VEBO

max.

4 V

Collector current (average)

IC(AV)

max.

4 A

Collector current (peak value); f

> 1 MHz

ICM

max.

12 A

R.F. power dissipation (f

> 1 MHz); Tmb =25 °CPrf

max.

105 W

Storage temperature

Tstg

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. SOAR.

handbook, halfpage

MGP630

102

(A)

Th = 70 °C

Tmb = 25 °C

VCE (V)

Fig.3 R.F. power dissipation; VCE ≤ 28 V; f > 1 MHz.

I Continuous d.c. operation

II Continuous r.f. operation

III Short-time operation during mismatch

handbook, halfpage

100

150

100

MGP631

Prf

(W)

Th (°C)

ΙΙ

ΙΙΙ

derate by 0.58 W/K

0.43 W/K

THERMAL RESISTANCE

(dissipation = 45 W; Tmb = 83,5 °C, i.e. Th =70 °C)

From junction to mounting base (d.c. dissipation)

Rth j-mb(dc)

2,65 K/W

From junction to mounting base (r.f. dissipation)

Rth j-mb(rf)

1,95 K/W

From mounting base to heatsink

Rth mb-h

0,3 K/W

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