August 1986

6

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW96

APPLICATION INFORMATION

R.F. performance in s.s.b. class-AB operation (linear power amplifier)

List of components:

Notes

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.

Relative to the according peak envelope powers these figures should be increased by 6 dB.

2. ATC means American Technical Ceramics.

OUTPUT POWER

W

dB

at 200 W (P.E.P.)

dB

dB

A

25 to 200 (P.E.P.)

> 13,5

> 40

< 5,0

<−30

< −30

0,1

C1 = C4 = C10 = C14 = 100 pF film dielectric trimmer

C2 = 27 pF ceramic capacitor (500 V)

C3 = 270 pF polysterene capacitor (630 V)

C5 = C7 = C8 = 220 nF multilayer ceramic chip capacitor

C9 = 47

µF/63 V electrolytic capacitor

C11 = 2

C12 = 2

L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2

× 5 mm

L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)

L3 = 150 nH; 5 turns Cu wire (2,0 mm); int. dia. 10,0 mm; length 18,7 mm; leads 2

× 5 mm

L4 = 197 nH; 5 turns Cu wire (2,0 mm); int. dia. 12,0 mm; length 18,6 mm; leads 2

× 5 mm

R1 = 0,66

Ω; parallel connection of 5 × 3,3 Ω metal film resistors (PR37; ± 5%; 1,6 W each)

R2 = 27

Ω carbon resistor (± 5%; 0,5 W)

Fig.8 Test circuit; s.s.b. class-AB.

handbook, full pagewidth

50

Ω

MGP691

C9

C5

C8

C7

L2

L1

R1

R2

L4

T.U.T.

L3

C11

C14

temperature

compensated bias

(Ri < 0.1 Ω)

C10

C2

C1

C4

C6

C3

+VCC

C12

C13

50

Ω