BLW96 datasheet(7/14 Pages) PHILIPS

7 / 14 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW96

Fig.9

Intermodulation distortion as a function of

output power.(1)

handbook, halfpage

100

200

300

−25

d3, d5

(dB)

−45

−35

MGP692

P.E.P. (W)

VCE = 50 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;

f2 = 28,001 MHz; Th =25 °C; typical values.

Fig.10 Double-tone efficiency and power gain as a

function of output power.

handbook, halfpage

100

P.E.P. (W)

300

100

MGP693

200

ηdt

(%)

(dB)

ηdt

VCE = 50 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;

f2 = 28,001 MHz; Th =25 °C; typical values.

Ruggedness

The BLW96 is capable of withstanding full load mismatch

(VSWR = 50 through all phases) up to 150 W (P.E.P.) or a

load mismatch (VSWR = 5 through all phases) up to

200 W (P.E.P.) under the following conditions:

VCE = 45 V; f = 28 MHz; Th =70 °C; Rth mb-h = 0,2 K/W.

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