BLW96 datasheet(4/14 Pages) PHILIPS

4 / 14 page

August 1986

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW96

CHARACTERISTICS

Tj =25 °C

Notes

1. Measured under pulse conditions: tp ≤ 300 µs; δ≤ 0,02.

2. Measured under pulse conditions: tp ≤ 50 µs; δ≤ 0,01.

Collector-emitter breakdown voltage

VBE =0;IC =50mA

V(BR)CES

110 V

Collector-emitter breakdown voltage

open base; IC = 200 mA

V(BR)CEO

55 V

Emitter-base breakdown voltage

open collector; IE =20mA

V(BR)EBO

Collector cut-off current

VBE =0;VCE =55V

ICES

10 mA

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

ESBO

20 mJ

RBE =10 Ω

ESBR

20 mJ

D.C. current gain(1)

typ.

15 to

IC = 7 A; VCE =5 V

hFE

D.C. current gain ratio of matched devices(1)

IC = 7 A; VCE =5V

hFE1/hFE2

≤

1,2

Collector-emitter saturation voltage(1)

IC = 20 A; IB = 4 A

VCEsat

typ.

1,9 V

Transition frequency at f = 100 MHz(2)

−IE = 7 A; VCB = 45 V

typ.

235 MHz

−IE = 20 A; VCB = 45 V

typ.

245 MHz

Collector capacitance at f = 1 MHz

IE =Ie = 0; VCB =50V

Feedback capacitance at f = 1 MHz

typ.

280 pF

IC = 150 mA; VCE =50V

Cre

typ.

170 pF

Collecting-ﬂange capacitance

Ccf

typ.

4,4 pF

BLW96 Datasheet(PDF) 4 Page - NXP Semiconductors

BLW96 Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL