August 1986

2

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW96

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

AB and B operated high power

industrial and military transmitting

equipment in the h.f. and v.h.f. band.

The transistor presents excellent

performance as a linear amplifier in

s.s.b. applications. It is resistance

stabilized and is guaranteed to

withstand severe load mismatch

conditions. Transistors are supplied

envelope with a ceramic cap. All

leads are isolated from the flange.

QUICK REFERENCE DATA

Note

1.

MODE OF

OPERATION

V

f

MHz

W

dB

η

%

dB

dB

A

s.s.b. (class-AB)

50

1,6

− 28 25 − 200 (P.E.P.) >

13,5

>

<−30 <−30

0,1

c.w. (class-B)

50

108

200

typ.

6,5 typ. 67

−−

(6)

s.s.b. (class-A)

40

28

50 (P.E.P.) typ.

19

−

typ.

−40 <−40

(4)

PIN CONFIGURATION

Fig.1 Simplified outline. SOT121B.

handbook, halfpage

MLA876

43

2

1

PINNING - SOT121B.

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.