1998 Feb 18

5

Philips Semiconductors

Objective specification

P-channel enhancement mode MOS transistor

BSH299

Fig.2 Power derating curve.

handbook, halfpage

0

200

1

0

0.2

0.4

0.6

0.8

MGL382

50

100

150

Ptot

(W)

Ts (

Fig.3 SOAR.

handbook, halfpage

−1

MGL383

−1

VDS (V)

ID

(A)

−10

DC

pulsed

Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.

10

0.75

0.50

0.33

0.20

0.10

0.05

0.02

0.01

0.00

1

1

MGL384

tp (s)

t p

T

P

t

t p

T

Rth j-s

(K/W)

tp (s) =

1.00