BSH299 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1998 Feb 18

Philips Semiconductors

Objective speciﬁcation

P-channel enhancement mode MOS transistor

BSH299

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = −10 µA

−50

−−

VGSth

gate-source threshold voltage

VGS =VDS; ID = −1mA

−0.8

−−2V

IDSS

drain-source leakage current

VGS = 0; VDS = −40 V

−−−100

VGS = 0; VDS = −50 V

−−−10

µA

VGS = 0; VDS = −50 V; Tj = 125 °C −−−60

µA

IGSS

gate leakage current

VGS = ±20 V; VDS =0

−−±10

RDSon

drain-source on-state resistance

VGS = −10 V; ID = −0.13 A;

see Fig.10

−−

Ω

y

fs

forward transfer admittance

VDS = −25 V; ID = −0.13 A

−−

Ciss

input capacitance

VGS = 0; VDS = −25 V; f = 1 MHz;

see Fig.7

−

Coss

output capacitance

−

Crss

reverse transfer capacitance

−

3.5

Switching times (see Figs 5 and 6)

ton

turn-on switching time

VGS =0to −10 V; VDD = −40 V;

ID = −0.2 A

−

toff

turn-off switching time

VGS = −10 to 0 V; VDD = −40 V;

ID = −0.2 A

−

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