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BSH299 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BSH299
Description  P-channel enhancement mode MOS transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSH299 Datasheet(HTML) 2 Page - NXP Semiconductors

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1998 Feb 18
2
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
FEATURES
• Low threshold voltage
• High-speed switching
• No secondary breakdown
• Direct interface to C-MOS, TTL, etc.
APPLICATIONS
• Power management
• Battery powered applications e.g. cellular phones
• General purpose switch.
DESCRIPTION
P-channel enhancement mode MOS transistor in a
SOT363 SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT363
PIN
SYMBOL
DESCRIPTION
1
d
drain
2
d
drain
3
g
gate
4
s
source
5
d
drain
6
d
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
Top view
d
g
MAM396
13
2
4
5
6
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−−50
V
VGSO
gate-source voltage (DC)
open drain
−±20
V
VGSth
gate-source threshold voltage
ID = −1 mA; VDS =VGS
−0.8
−2V
ID
drain current (DC)
Ts =80 °C
−−0.2
A
RDSon
drain-source on-state resistance
ID = −0.13 A; VGS = −10 V
−
10
Ω
Ptot
total power dissipation
Ts =80 °C
−
0.7
W



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