BSH299 datasheet(7/12 Pages) PHILIPS

7 / 12 page

1998 Feb 18

Philips Semiconductors

Objective speciﬁcation

P-channel enhancement mode MOS transistor

BSH299

Fig.9

Transfer characteristics; typical values.

VDS = −10 V; Tj =25 °C.

handbook, halfpage

−2

−4

−10

−600

−200

−400

MLD196

−6

(mA)

VGS (V)

−8

Fig.10 Drain-source on-state resistance as a

function of drain current; typical values.

Tj =25 °C; tp = 300 µs; δ =0.

handbook, halfpage

−1

MLD198

−10

−102

−103

ID (mA)

RDSon

(

Ω)

VGS = −2.5 V −3 V

−7.5 V

−10 V

−5 V

−4 V

Fig.11 Temperature coefficient of gate-source

threshold voltage as a function of junction

temperature; typical values.

k=(VGSth at Tj)/(VGSth at 25 °C).

ID = −1 mA; VDS =VGS.

handbook, halfpage

0.6

0.8

1.0

1.2

100

150

MLD195

−50

Tj (°C)

Fig.12 Temperature coefficient of drain-source

on-resistance as a function of junction

temperature; typical values.

k=(RDSon at Tj)/(RDSon at 25 °C).

(1) ID = −130 mA; VGS = −10 V.

(2) ID = −20 mA; VGS = −2.4 V.

handbook, halfpage

0.6

1.0

1.4

1.8

100

150

−50

Tj (°C)

MLD194

(1)

(2)

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