BSH299 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1998 Feb 18

Philips Semiconductors

Objective speciﬁcation

P-channel enhancement mode MOS transistor

BSH299

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Ts is the temperature at the soldering point of the drain lead.

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Device mounted on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W.

4. Device mounted on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−−50

VGSO

gate-source voltage (DC)

open drain

−±20

drain current (DC)

Ts = 80 °C; note 1

−−0.2

IDM

peak drain current

note 2

−−0.8

Ptot

total power dissipation

Ts =80 °C; see Fig.2

−

0.7

Tamb =25 °C; note 3; see Fig.2

−

0.98

Tamb =25 °C; note 4; see Fig.2

−

0.66

Tstg

storage temperature

−55

+150

°C

operating junction temperature

−55

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point; see Fig.4

100

K/W

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