BSH299 datasheet(6/12 Pages) PHILIPS

Part #	BSH299

Description	P-channel enhancement mode MOS transistor

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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6 / 12 page

1998 Feb 18

Philips Semiconductors

Objective speciﬁcation

P-channel enhancement mode MOS transistor

BSH299

Fig.5 Switching time test circuit.

handbook, halfpage

MLD189

Ω

VDD = −40 V

0 V

−10 V

Fig.6 Input and output waveforms.

handbook, halfpage

MBB690

10 %

90 %

10 %

ton

toff

OUTPUT

INPUT

Fig.7

Capacitance as a function of

drain-source voltage; typical values.

VGS = 0; Tj =25 °C; f = 1 MHz.

handbook, halfpage

−10

−20

−30

MLD191

(pF)

VDS (V)

Ciss

Coss

Crss

Fig.8 Output characteristics; typical values.

handbook, halfpage

−2

−10

−12

−600

−200

−400

MLD197

−4

−6

−8

VDS (V)

VGS = −10 V −7.5 V

−6 V

−5 V

−4 V

−3 V

−2.5 V

I D

(mA)

Tj =25 °C.

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